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Interceram is SCOPUS-listed!
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  Abdel-Aziz, Doaa Abdel ; Reda, A. E. ; Souaya, E. R.
Effect of ZnO Addition on the Microstructure and Microwave Dielectric Properties of BaxSr1-xTiO3 Ceramics
Interceram 61 (2012) [3] 134-138
High-Performance Ceramics


Abstract:
The effects of ZnO addition on the microwave dielectric properties and the microstructures of BaxSr1-xTiO3 ceramics prepared by conventional solid-state routes have been investigated. Doping with ZnO can effectively promote the densification and the microwave dielectric properties of BaxSr1-xTiO3 (0.00<=x<=0.30). It was found that five compositions with (0.00<=x<=0.30) can be sintered at 1,300–1,500 °C. The addition of ZnO (0.10, 0.15 and 0.20 mol-%) to BaxSr1-xTiO3 ceramic bodies decreased the sintering temperature with optimum density at 1,400 °C and the dense microstructure due to the liquid phase effect. In the BaxSr1-xTiO3 system, the microwave dielectric properties can be effectively controlled by varying Ba/Sr ratios, zinc concentration and the microstructure developed. The best combination of microwave dielectric characteristics was obtained for BST10 ceramic with 0.15 mol-% ZnO sintered at 1400 °C/2h with dielectric constant = 232, low dielectric loss = 0.00061 and quality factor (Q x ƒ) = 2,996 at 2 GHz. This is due to presence of rod-like grains which might have played an important role for the enhanced microwave dielectric properties.

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